Description
A0 to A16 DQ0 to DQ15
CEU CEL WE OE
VCC GND
- Address Inputs - Data In/Data Out - Chip Enable Upper Byte - Chip Enable Lower Byte - Write Enable - Output Enable - Power (+5V) - Ground
DESCRIPTION
The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits.Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition.When such a condition occurs, the
Features
- 10-Year Minimum Data Retention in the Absence of External Power Data is Automatically Protected During a Power Loss Separate Upper Byte and Lower Byte ChipSelect Inputs Unlimited Write Cycles Low-Power CMOS Read and Write Access Times as Fast as 70ns Lithium Energy Source is Electrically Disconnected to Retain Freshness Until Power is Applied for the First Time Full ±10% Operating Range (DS1258Y) Optional ±5% Operating Range (DS1258AB).