DMT67M8LSS 60V N-CHANNEL MOSFET

DIODES

Description

DMT67M8LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 6.6mΩ @ VGS = 10V 8.4mΩ @ VGS = 4.5V ID Max TA = +25°C 14.8.
and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal fo.

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Datasheet Specifications

Part number: DMT67M8LSS
Manufacturer: DIODES ↗
File Size: 455.09 KB
Datasheet: DMT67M8LSS-DIODES.pdf
Description: 60V N-CHANNEL MOSFET

Features

* 100% Unclamped Inductive Switching (UIS) Test in Production

Applications

* This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* Synchronous Rectifier
* Power Management Functions

DMT67M8LSS Distributors

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DMT67M8LSS 60V N-CHANNEL MOSFET DIODES

DIODES DMT67M8LSS-like datasheet