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DMT67M8LSS 60V N-CHANNEL MOSFET

DMT67M8LSS Description

DMT67M8LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 6.6mΩ @ VGS = 10V 8.4mΩ @ VGS = 4.5V ID Max TA = +25°C 14.8.
and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal fo.

DMT67M8LSS Features

* 100% Unclamped Inductive Switching (UIS) Test in Production

DMT67M8LSS Applications

* This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* Synchronous Rectifier
* Power Management Functions

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60V N-CHANNEL MOSFET DIODES
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