DMT67M8LCGQ 60V N-Channel MOSFET

DIODES

Description

DMT67M8LCGQ 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 5.7mΩ @ VGS = 10V 8.1mΩ @ VGS = 4.5V ID TC = +25°C 64.6A 5.
and Applications This MOSFET is designed to meet the stringent requirements of Automotive applications.

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Datasheet Specifications

Part number: DMT67M8LCGQ
Manufacturer: DIODES ↗
File Size: 443.47 KB
Datasheet: DMT67M8LCGQ-DIODES.pdf
Description: 60V N-Channel MOSFET

Features

* 100% Unclamped Inductive Switching (UIS) Test in Production

Applications

* This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:
* Synchronous Rectifier
* Power Management Functions

DMT67M8LCGQ Distributors

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DMT67M8LCGQ 60V N-Channel MOSFET DIODES

DIODES DMT67M8LCGQ-like datasheet