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MTBA0N10KJ3 - N-Channel Enhancement Mode MOSFET

Product Overview

Cystech Electonics

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MTBA0N10KJ3 N-Channel Enhancement Mode MOSFET by Cystech Electonics - Datasheet Preview — Datasheet preview – MTBA0N10KJ3

Datasheet Details

Part number	MTBA0N10KJ3
Manufacturer	Cystech Electonics
File Size	442.38 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	MTBA0N10KJ3 Datasheet
Additional preview pages of the MTBA0N10KJ3 datasheet.

Product details

Features

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
ESD Protected Gate.
Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=8.8A RDS(ON)@VGS=4.5V, ID=8.8A RDS(ON)@VGS=4V, ID=8.8A 100V 13.4A 3.7A 82 mΩ(typ) 89 mΩ(typ) 92 mΩ(typ) Symbol MTBA0N10KJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTBA0N10KJ.

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Published: Feb 9, 2016 |