MTBA5A10Q8 - Dual N-Channel Enhancement Mode Power MOSFET

Product Overview

CYStech

Datasheet Details

Part number	MTBA5A10Q8
Manufacturer	CYStech
File Size	312.79 KB
Description	Dual N-Channel Enhancement Mode Power MOSFET
Datasheet	MTBA5A10Q8 Datasheet
Additional preview pages of the MTBA5A10Q8 datasheet.

Product details

Description

The MTBA5A10Q8 provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost effectiveness.

Features

RDS(ON)=150mΩ(max. )@VGS=10V, ID=2.5A.
Simple drive requirement.
Low on-resistance.
Fast switching speed.
Dual N-ch MOSFET package.
Pb-free lead plating & Halogen-free package Equivalent Circuit MTBA5A10Q8 Outline SOP-8 G：Gate S：Source D：Drain MTBA5A10Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C591Q8 Issued Date : 2010.10.08 Revised Date : 2011.10.03 Page No. : 2/8 Absolute Maximum Ratings (Ta=25°C) Paramet.

📁 Similar Datasheet

MTBA0N10KJ3 - N-Channel Enhancement Mode MOSFET (Cystech Electonics)
MTBA6C12H8 - N- and P-channel enhancement mode power MOSFET (Cystech Electonics)
MTBA6C15H8 - P- & N-Channel Enhancement Mode Power MOSFET (CYStech Electronics)
MTB - METALLIZED POLYESTER FILM CAPACITORS (RUBYCON CORPORATION)
MTB-F000329MNHNAA-B - LCD Module (Microtips)
MTB-F000368MNHNAA - LCD Module (Microtips)
MTB001 - High Output Interface Driver ICs (Shindengen Electric)
MTB001D01-1 - LCD Module (CSOT)

Other Datasheets by CYStech

MTBA5C10AQ8 - N & P-Channel Enhancement Mode Power MOSFET
MTBA5C10H8 - N & P-Channel Enhancement Mode Power MOSFET
MTBA5C10Q8 - N & P-Channel Enhancement Mode Power MOSFET
MTBA5C10V8 - N & P-Channel Enhancement Mode Power MOSFET
MTBA5N10FP - N-Channel Enhancement Mode Power MOSFET
MTBA5N10J3 - N-Channel Enhancement Mode Power MOSFET

Published: Apr 28, 2016 |