MTB09N06FP Datasheet - Cystech Electonics

MTB09N06FP N-Channel Enhancement Mode Power MOSFET

MTB09N06FP Features

* Low Gate Charge

* Simple Drive Requirement

* Repetitive Avalanche Rated

* Fast Switching Characteristic

* RoHS compliant package RDSON(TYP) @ VGS=4.5V, ID=20A 60V 60A 11A 6.4mΩ 7.8mΩ Symbol MTB09N06FP Outline TO-220FP G：Gate D：Drain S：Source GDS Order

Datasheet Details

MTB09N06FP

Cystech Electonics

357.99 KB

N-channel enhancement mode power mosfet.

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TAGS

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