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BTN5551N3 - General Purpose NPN Epitaxial Planar Transistor

BTN5551N3 Description

CYStech Electronics Corp.www.DataSheet4U.com Spec.No.: C208N3-H Issued Date : 2003.06.06 Revised Date : Page No.: 1/4 General Purpose NPN Epitax.
The BTN5551N3 is designed for general purpose applications requiring high breakdown voltage. High collector-emitter breakdown volt.

BTN5551N3 Features

* High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA)
* Complement to BTP5401N3 Symbol BTN5551N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Cu

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Datasheet Details

Part number
BTN5551N3
Manufacturer
Cystech Electonics
File Size
184.54 KB
Datasheet
BTN5551N3_CystechElectonics.pdf
Description
General Purpose NPN Epitaxial Planar Transistor

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General Purpose NPN Epitaxial Planar Transistor Cystech Electonics
Cystech Electonics BTN5551N3-like datasheet