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BTN3501J3 - High Speed Switching diode

BTN3501J3 Description

CYStech Electronics Corp.Low Vcesat NPN Epitaxial Planar Transistor BTN3501J3 BVCEO IC VCESAT Spec.No.: C606J3 Issued Date : 2003.10.07 Revised .

BTN3501J3 Features

* Low VCE(sat)
* High BVCEO
* Excellent current gain characteristics
* RoHS compliant package Symbol BTN3501J3 Outline TO-252(DPAK) B：Base C：Collector E：Emitter B CE Ordering Information Device BTN3501J3-XX-T3-S Package TO-252 (RoHS compliant package) Shipping

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Datasheet Details

Part number
BTN3501J3
Manufacturer
Cystech Electonics
File Size
259.13 KB
Datasheet
BTN3501J3_CystechElectonics.pdf
Description
High Speed Switching diode

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High Speed Switching diode Cystech Electonics
Cystech Electonics BTN3501J3-like datasheet