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BTD1758J3 NPN Epitaxial Planar Transistor

BTD1758J3 Description

CYStech Electronics Corp.Low Vcesat NPN Epitaxial Planar Transistor Spec.No.: C842J3 Issued Date : 2003.05.25 Revised Date : Page No.: 1/4 BTD17.

BTD1758J3 Features

* Low VCE(sat), VCE(sat)=0.4 V (typical), at IC / IB = 2A / 0.5A
* Excellent current gain characteristics
* Complementary to BTB1182J3 Symbol BTD1758J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage C

BTD1758J3 Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD1758J3 CYStek Product Specification

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Datasheet Details

Part number
BTD1758J3
Manufacturer
Cystech Electonics
File Size
142.20 KB
Datasheet
BTD1758J3_CystechElectonics.pdf
Description
NPN Epitaxial Planar Transistor

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NPN Epitaxial Planar Transistor Cystech Electonics
Cystech Electonics BTD1758J3-like datasheet