Datasheet Details
| Part number | BTD1782N3 |
|---|---|
| Manufacturer | CYStech |
| File Size | 185.32 KB |
| Description | General Purpose NPN Epitaxial Planar Transistor |
| Datasheet |
 BTD1782N3 Datasheet
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Description
The BTD1782N3 is designed for use in driver and output stages of AF amplifier and general purpose application.
Features
- Low VCE(SAT), VCE(SAT)= 0.15V(typ) @IC=500mA/IB=50mA.
- High breakdown voltage, VCEO=80V (min. ).
- Complements to BTB1198N3.
- Pb-free package Symbol BTD1782N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO.