BTB1182J3 - PNP Transistor

Cystech Electonics Corp

Datasheet Details

Part number	BTB1182J3
Manufacturer	Cystech Electonics Corp
File Size	160.09 KB
Description	PNP Transistor
Datasheet	BTB1182J3_CystechElectonicsCorp.pdf

Low VCE(sat), VCE(sat)=-0.7 V (typical), at IC / IB = -2A / -0.5A.
Excellent current gain characteristics.
Complementary to BTD1758J3 Symbol BTB1182J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Note : Single Pulse , Pw=10ms Sym.

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Published: Mar 9, 2010 |