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BTB1116AN3 - PNP Transistor

Features

  • High breakdown voltage, BVCEO≥ 60V.
  • Large continuous collector current capability.
  • Low collector saturation voltage.
  • Pb-free lead plating and halogen-free package Symbol BTB1116AN3 Outline C SOT-23 B：Base C：Collector E：Emitter E B Ordering Information Device BTB1116AN3-0-T1-G Package Shipping SOT-23 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS complian.

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Datasheet Details

Part number BTB1116AN3
Manufacturer CYStech
File Size 320.97 KB
Description PNP Transistor
Datasheet download datasheet BTB1116AN3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor BTB1116AN3 BVCEO IC Spec. No. : C626N3 Issued Date : 2018.02.14 Revised Date : Page No.