FM25V10 Datasheet - Cypress Semiconductor

FM25V10 1Mb Serial 3V F-RAM Memory

The FM25V10 is a 1-Mbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and sys.

FM25V10 Features

* 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 128K × 8

* High-endurance 100 trillion (1014) read/writes

* 151-year data retention (See Data Retention and Endurance on page 16)

* NoDelay™ writes

* Advanced high-reliability ferroelectric process

* V

FM25V10 Datasheet (877.21 KB)