FM16W08 - 64-Kbit (8 K x 8) Wide Voltage Bytewide F-RAM Memory

Cypress Semiconductor

Datasheet Details

Part number	FM16W08
Manufacturer	Cypress Semiconductor
File Size	308.76 KB
Description	64-Kbit (8 K x 8) Wide Voltage Bytewide F-RAM Memory
Datasheet	FM16W08-CypressSemiconductor.pdf

64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K × 8.
High-endurance 100 trillion (1014) read/writes.
151-year data retention (see the Data Retention and Endurance table).
NoDelay™ writes.
Advanced high-reliability ferroelectric process.
SRAM and EEPROM compatible.
Industry-standard 8 K × 8 SRAM and EEPROM pinout.
70-ns access time, 130-ns cycle time.
Superior to battery-backed SRAM modules.
No battery concerns.

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Published: Mar 14, 2017 |