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FM16W08 - 64Kb Wide Voltage Bytewide F-RAM

General Description

The FM16W08 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process.

A ferroelectric random access memory or F-RAM is nonvolatile but operates in other respects as a RAM.

Key Features

  • 64Kbit Ferroelectric Nonvolatile RAM.
  • Organized as 8,192 x 8 bits.
  • High Endurance 100 Trillion (1014) Read/Writes.
  • 38 year Data Retention (@ +75C).
  • NoDelay™ Writes.
  • Advanced High-Reliability Ferroelectric Process Superior to BBSRAM Modules.
  • No Battery Concerns.
  • Monolithic Reliability.
  • True Surface Mount Solution, No Rework Steps.
  • Superior for Moisture, Shock, and Vibration.
  • Resistant to Negative Voltage Und.

📥 Download Datasheet

Datasheet Details

Part number FM16W08
Manufacturer Ramtron International
File Size 162.15 KB
Description 64Kb Wide Voltage Bytewide F-RAM
Datasheet download datasheet FM16W08 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr Preliminary FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 100 Trillion (1014) Read/Writes • 38 year Data Retention (@ +75C) • NoDelay™ Writes • Advanced High-Reliability Ferroelectric Process Superior to BBSRAM Modules • No Battery Concerns • Monolithic Reliability • True Surface Mount Solution, No Rework Steps • Superior for Moisture, Shock, and Vibration • Resistant to Negative Voltage Undershoots SRAM & EEPROM Compatible • JEDEC 8Kx8 SRAM & EEPROM pinout • 70 ns Access Time • 130 ns Cycle Time Low Power Operation • Wide Voltage Operation 2.7V to 5.5V • 12 mA Active Current • 20 µA (typ.