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E3M0120090J - Silicon Carbide Power MOSFET

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Cree

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E3M0120090J Silicon Carbide Power MOSFET by Cree - Datasheet Preview — Datasheet preview – E3M0120090J

Datasheet Details

Part number	E3M0120090J
Manufacturer	Cree
File Size	0.96 MB
Description	Silicon Carbide Power MOSFET
Datasheet	E3M0120090J Datasheet
Additional preview pages of the E3M0120090J datasheet.

Product details

Features

3rd generation of SiC MOSFET technology.
High blocking voltage with low On-resistance.
High speed switching with low capacitances.
Fast intrinsic diode with low reverse recovery (Qrr).
Halogen free, RoHS compliant.
Wide creepage (~7mm) between drain and source.
Automotive qualified (AEC-Q101) and PPAP capable Benefits.
Reduce switching losses and minimize gate ringing.
High system efficiency.
Increased pow.

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Published: Jun 25, 2023 |