E3M0120090D Silicon Carbide Power MOSFET

CREE

E3M0120090D Description

VDS 900 V E3M0120090D Silicon Carbide Power MOSFET E-Series Automotive ID @ 25˚C 23 A RDS(on) 120 mΩ N-Channel Enhancement Mode .

E3M0120090D Features

* Package
* 3rd generation SiC MOSFET technology
* High blocking voltage with low On-resistance
* High speed switching with low capacitances
* Fast intrinsic diode with low reverse recovery (Qrr)
* Halogen free, RoHS compliant
* Automotive Qualif

E3M0120090D Applications

* Automotive EV battery chargers
* Renewable energy
* High voltage DC/DC converters Part Number E3M0120090D Package TO-247-3 Marking E3M0120090 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter VDSmax VGSmax VGSop Drain - Source Voltage Gat

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Datasheet Details

Part number: E3M0120090D
Manufacturer: CREE
File Size: 570.96 KB
Datasheet: E3M0120090D-CREE.pdf
Description: Silicon Carbide Power MOSFET

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Silicon Carbide Power MOSFET CREE

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