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MXN3382 Dual N-Channel Enhancement Mode Power MOSFET

MXN3382 Description

MXN3382 Dual N-Channel Enhancement Mode Power MOSFET .
The MX3382 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gatevoltages as low as 2.

MXN3382 Features

* Schematic diagram
* VDS =18V，ID =22A
* @VGS=4.5V RDS(ON)(Typ. )=4.5mΩ xxxxx
* @VGS=3.8V RDS(ON)(Typ. )=4.7mΩ
* @VGS=2.5V RDS(ON)(Typ. )=6mΩ ESD Rating: 2000V HBM k High Power and current handing capability Lead free product is acquired e Surface Mount Package Marking and pin Assig

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Datasheet Details

Part number
MXN3382
Manufacturer
ChipSourceTek
File Size
647.47 KB
Datasheet
MXN3382-ChipSourceTek.pdf
Description
Dual N-Channel Enhancement Mode Power MOSFET

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