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CMT2N7002AG - SMALL SIGNAL MOSFET

Description

This N-Channel enhancement mode field effect transistor is produced using high cell density, DMOS technology.

These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.

Features

  • High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable High Saturation Current Capability Built-in G-S Protection Diode PIN.

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Datasheet Details

Part number CMT2N7002AG
Manufacturer Champion
File Size 197.41 KB
Description SMALL SIGNAL MOSFET
Datasheet download datasheet CMT2N7002AG Datasheet

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Full PDF Text Transcription

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GENERAL DESCRIPTION This N-Channel enhancement mode field effect transistor is produced using high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 115mA DC and can deliver pulsed currents up to 800mA. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
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