CXDM6053N Datasheet (Central Semiconductor) - SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CXDM6053N, SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

The CENTRAL SEMICONDUCTOR CXDM6053N is a high current N-channel enhancement-mode silicon MOSFET, designed for high speed pulsed amplifier and driver applications.

This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current.

SOT-89 CASE APPLICATIONS: * Load/

CXDM6053N Features

* Low rDS(ON) (52mΩ MAX @ VGS=4.5V)

* High current (ID=5.3A)

* Logic level compatibility MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage