CXDM3069N Datasheet (Central Semiconductor) - SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CXDM3069N, SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

The CENTRAL SEMICONDUCTOR CXDM3069N is a high current N-channel enhancement-mode silicon MOSFET, designed for high speed pulsed amplifier and driver applications.

This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current.

SOT-89 CASE APPLICATIONS: * Load/

CXDM3069N Features

* Low rDS(ON) (50mΩ MAX @ VGS=2.5V)

* High current (ID=6.9A)

* Logic level compatibility MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage