CGD65A130S2 - GaN HEMT

The CGD65A130S2 by Cambridge GaN Devices is a GaN HEMT. Below is the official datasheet preview.

Datasheet Details

Part number	CGD65A130S2
Manufacturer	Cambridge GaN Devices
File Size	915.70 KB
Description	GaN HEMT
Datasheet	CGD65A130S2-CambridgeGaNDevices.pdf
Additional preview pages of the CGD65A130S2 datasheet.

CGD65A130S2 Product details

Description

The CGD65A130S2 is an enhancement mode GaN-on-silicon power transistor, exploiting the unique material properties of GaN to deliver high current, high breakdown voltage and high switching frequency for a wide range of electronics applications.

Features

650 V - 12 A e-mode GaN power switch.
ICeGaN™ gate technology for high gate threshold and broad gate voltage window compatible with gate-drivers for Si MOSFETs.
Gate drive voltage 9 V to 20 V.
Current sense function.
RDS(on) = 130 mΩ.
Suitable for very high switching frequency.
Kelvin Contact.
Small 8x8 mm2 PCB footprint.
Bottom side cooled DFN package.

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Published: Nov 30, 2024 |