MTDNK2N6 - Dual N-Channel Enhancement Mode Power MOSFET

Product Overview

CYStech

Datasheet Details

Part number	MTDNK2N6
Manufacturer	CYStech
File Size	286.95 KB
Description	Dual N-Channel Enhancement Mode Power MOSFET
Datasheet	MTDNK2N6 Datasheet
Additional preview pages of the MTDNK2N6 datasheet.

Product details

Description

The MTDNK2N6 is a dual N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Features

Simple drive requirement.
Low on-resistance.
Small package outline.
Pb-free package Equivalent Circuit MTDNK2N6.
with gate protection diode The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C (Note 1) Pulsed Drain Current (Note 2, 3) Total Power Dissipation @ TA=25 °C Linear Derating Factor Operating Junction.

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Published: Apr 28, 2016 |