Datasheet4U Logo Datasheet4U.com

HBN3101S6R - NPN Epitaxial Planar Transistor

Key Features

  • Two BF422 chips in a SOT-363 package.
  • Mounting possible with SOT-323 automatic mounting machines.
  • Transistor elements are independent, eliminating interference.
  • Mounting cost and area can be cut in half.
  • High BVCEO, BVCEO≧300V.
  • Pb-free lead plating and halogen-free package. Equivalent Circuit HBN3101S6R Outline SOT-363 Tr1 Tr2 Ordering Information Device HBN3101S6R-0-T1-G Package SOT-363 (Pb-free lead plating and halogen-free packag.

📥 Download Datasheet

Datasheet Details

Part number HBN3101S6R
Manufacturer CYStech Electronics
File Size 303.71 KB
Description NPN Epitaxial Planar Transistor
Datasheet download datasheet HBN3101S6R Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HBN1803M65 Octuple High Voltage NPN Epitaxial Planar Transistor Cystech Electonics
HBN2222S6R General Purpose NPN Epitaxial Planar Transistors Cystech Electonics
HBN2411S6R General Purpose NPN Epitaxial Planar Transistors Cystech Electonics
HBN2412C6 NPN Transistor CYStech
HBN2412S6R General Purpose NPN Epitaxial Planar Transistors Cystech Electonics

Other Datasheets by CYStech Electronics

Part Number Description
HBN2515S6R Low Vcesat NPN Epitaxial Planar Transistor
HBNP1268Q8 General Purpose NPN PNP Epitaxial Planar Transistors
HBNP45C6 General Purpose NPN PNP Epitaxial Planar Transistors
HBNP45S6R General Purpose NPN / PNP Epitaxial Planar Transistors
HBNP5213G6 NPN AND PNP Dual Epitaxial Planar Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. NPN Epitaxial Planar Transistor Spec. No. : C234S6R Issued Date : 2013.10.21 Revised Date : Page No. : 1/6 HBN3101S6R (Dual Transistors) Features • Two BF422 chips in a SOT-363 package. • Mounting possible with SOT-323 automatic mounting machines. • Transistor elements are independent, eliminating interference. • Mounting cost and area can be cut in half. • High BVCEO, BVCEO≧300V • Pb-free lead plating and halogen-free package.