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HBN1803M65 - Octuple High Voltage NPN Epitaxial Planar Transistor

Description

High breakdown voltage.

Low saturation voltage, typical VCE(sat) =0.12V at Ic/IB =20mA/1mA.

Complementary to HBP1804M65 Pb-free lead plating and halogen-free package Equivalent Circuit HBN1803M65 Outline MISWB6×5-18L-A Top View Bottom View H

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Datasheet Details

Part number HBN1803M65
Manufacturer Cystech Electonics
File Size 307.19 KB
Description Octuple High Voltage NPN Epitaxial Planar Transistor
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Full PDF Text Transcription

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CYStech Electronics Corp. Octuple High Voltage NPN Epitaxial Planar Transistor HBN1803M65 Spec. No. : C628M65 Issued Date : 2015.10.27 Revised Date : Page No. : 1/7 Description • High breakdown voltage. (BVCEO=400V) • Low saturation voltage, typical VCE(sat) =0.12V at Ic/IB =20mA/1mA. • Complementary to HBP1804M65 • Pb-free lead plating and halogen-free package Equivalent Circuit HBN1803M65 Outline MISWB6×5-18L-A Top View Bottom View HBN1803M65 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C628M65 Issued Date : 2015.10.27 Revised Date : Page No. : 2/7 The following ratings and characteristics apply to each transistor in this device.
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