CT8124-T52 - N-Channel MOSFET

CT Micro

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Datasheet Details

Part number	CT8124-T52
Manufacturer	CT Micro
File Size	1.05 MB
Description	N-Channel MOSFET
Datasheet	CT8124-T52-CTMicro.pdf

CT8124-T52 Product details

Description

The CT8124 T52 uses high performance Trench Technology to provide excellent RDS(ON)and low gate charge which is suitable for most of the synchronous buck converter applications . Notebook High side switching Power Management Package Outline Schematic Drain Gate Source Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 3 Aug, 2015 CT8124-T52 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain

Features

Drain-Source Breakdown Voltage VDSS = 20V.
Drain-Source On-Resistance RDS(ON) 23m, at VGS= 4.5V, ID= 5.0A RDS(ON) 27m, at VGS= 2.5V, ID= 3.5A RDS(ON) 34m, at VGS= 1.8V, ID= 2.8A.
Continuous Drain Current at TC=25℃ID = 9.0A.
Advanced high cell density Trench Technology.
RoHS Compliance & Halogen Free.

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Published: May 20, 2020 |