Datasheet Details
- Part number
- HPN800R1K4PD-G
- Manufacturer
- CR Micro
- File Size
- 236.56 KB
- Datasheet
- HPN800R1K4PD-G-CRMicro.pdf
- Description
- Silicon N-Channel Power MOSFET
HPN800R1K4PD-G Description
Silicon N-Channel Power MOSFET ○R HPN800R1K4PD-G General .
HPN800R1K4PD-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switc.
HPN800R1K4PD-G Applications
* Power switch circuit of adaptor, charger and LED. Absolute（Tj= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS ID a1 IDMa2 VGSS EAS a3 dv/dt a4
dv/dt
dif/dt
PD
VESD(G-S)
TJ，Tstg
Drain-to-Source Voltage(VGS=0V)
Continuous Drain Current TC = 25 °C Pulsed Drain Current TC = 25 °C Gate-to-So
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