Datasheet Details
| Part number | CS3N30B23H |
|---|---|
| Manufacturer | CR Micro |
| File Size | 246.28 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet |
 CS3N30B23H-CRMicro.pdf
|
| Part number | CS3N30B23H |
|---|---|
| Manufacturer | CR Micro |
| File Size | 246.28 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet |
CS3N30B23H-CRMicro.pdf
|
VDSS 300 V CS3N30 B23H, the silicon N-channel Enhanced ID 3 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 2.5 W which reduce the conduction loss, improve switching RDS(ON)TYP 2.2 Ω performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is SOT-223, which accords with the RoHS standard.
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