CS01N60ASRD-G Datasheet (CR Micro) - Silicon N-Channel Power MOSFET

CS01N60ASRD-G, Silicon N-Channel Power MOSFET

VDSS 600 V CS01N60 ASRD-G, the silicon N-channel Enhanced ID 0.04 A VDMOSFETs, is obtained by the self-aligned planar Technology PD(TA=25℃) 0.5 W which reduce the conduction loss, improve switching RDS(ON)Typ 160 Ω performance and enhance the avalanche energy.

The transistor can be u

CS01N60ASRD-G Features

* l Fast Switching l Low ON Resistance(Rdson≤500Ω) l Low Gate Charge (Typical Data:3.1nC) l Low Reverse transfer capacitances(Typical:1.3pF) l Halogen Free Applications： TV power. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS dv/dt a2 PD VESD(G-S) TJ，Tstg Drai