Datasheet Details
- Part number
- CRTE110N03L2D-G
- Manufacturer
- CR Micro
- File Size
- 652.95 KB
- Datasheet
- CRTE110N03L2D-G-CRMicro.pdf
- Description
- Silicon N-Channel Power MOSFET
CRTE110N03L2D-G Description
Silicon N-Channel Power MOSFET ○R CRTE110N03L2D-G General .
CRTE110N03L2D-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switch.
CRTE110N03L2D-G Features
* 30
V
10
A
2
W
9.8 mΩ
* Fast Switching
* Low ON Resistance
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Test
CRTE110N03L2D-G Applications
* Power switch circuit of adaptor and charger. Absolute（TA= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 PD TJ，Tstg
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TA = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche
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