Datasheet Details
- Part number
- CRTE10DN06LD-G
- Manufacturer
- CR Micro
- File Size
- 530.44 KB
- Datasheet
- CRTE10DN06LD-G-CRMicro.pdf
- Description
- Silicon N-Channel Power MOSFET
CRTE10DN06LD-G Description
Silicon N-Channel Power MOSFET CRTE10DN06LD-G General .
CRTE10DN06LD-G the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve.
CRTE10DN06LD-G Applications
* Power switch circuit of adaptor and charger. VDSS ID PD(Ta=25℃) RDS(ON)
60
V
3.3
A
1.7
W
75
mΩ
Absolute（TA= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID IDMa1 VGS EAS a2
PD
TJ，Tstg
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TA = 100 °C Pulsed
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