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CEG2108E - Dual N-Channel MOSFET

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CET

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CEG2108E Dual N-Channel MOSFET by CET - Datasheet Preview — Datasheet preview – CEG2108E

Datasheet Details

Part number	CEG2108E
Manufacturer	CET
File Size	409.93 KB
Description	Dual N-Channel MOSFET
Datasheet	CEG2108E Datasheet
Additional preview pages of the CEG2108E datasheet.

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Features

20V, 8.5A, RDS(ON) = 14mΩ @VGS = 10V. RDS(ON) = 15mΩ @VGS = 4.5V. RDS(ON) = 20mΩ @VGS = 2.5V. RDS(ON) = 28mΩ @VGS = 1.8V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TSSOP-8 for Surface Mount Package. G2 S2 S2 D TSSOP-8 G1 S1 S1 D D.
1K G1.
1K G2 S1.
Typical value by design D1 S1 2 S1 3 G1 4.

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Published: Jun 12, 2018 |