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NE68139 - SILICON TRANSISTOR

Description

designed for use in low-noise and small signal amplifiers from VHF band to UHF band.

Low-noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity.

Features

  • NF = 1.2 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 7 mA.
  • S21e2 = 15 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 20 mA.

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Datasheet Details

Part number NE68139
Manufacturer CEL
File Size 1.87 MB
Description SILICON TRANSISTOR
Datasheet download datasheet NE68139 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DDAATTAA SSHHEEEETT SILICON TRANSISTOR NE68139 / 2SC4094 JEITA Part No. MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD 2.9±0.2 UT (1.8) 0.85 0.95 1.1−+00..12 PHASE0.8 0 to 0.1 DESCRIPTION The NE68139 / 2SC4094 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low-noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This achieved by direct nitride passivated base surface process (DNP process) which is a proprietary new fabrication technique. 0.4 2 PACKAGE DIMENSIONS (Units: mm) +0.1 −0.05 +0.1 −0.05 2.8 +0.2 −0.3 1.5 +0.2 −0.1 3 0.4 (1.9) +0.1O −0.05 FEATURES • NF = 1.2 dB TYP. @f = 1.
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