NE5511279A 7.5V OPERATION SILICON RF POWER LD-MOS FET

CEL

Description

DISCONTINUED SILICON POWER MOS FET NE5511279A 7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS .
The NE5511279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.

📥 Download Datasheet

NE5511279A Datasheet Preview — Preview of NE5511279A PDF

Datasheet Specifications

Part number: NE5511279A
Manufacturer: CEL
File Size: 797.72 KB
Datasheet: NE5511279A-CEL.pdf
Description: 7.5V OPERATION SILICON RF POWER LD-MOS FET

Features

* High output power
* High power added efficiency
* High linear gain
* Surface mount package
* Single supply : Pout = 40.0 dBm TYP. (f = 900 MHz, VDS = 7.5 V, Pin = 27 dBm, IDset = 400 mA) : Pout = 40.5 dBm TYP. (f = 460 MHz, VDS = 7.5 V, Pin = 25 dBm, IDset

Applications

* 460 MHz Radio Systems
* 900 MHz Radio Systems ORDERING INFORMATION Part Number NE5511279A-T1 NE5511279A-T1A Package 79A Marking W3 Supplying Form
* 12 mm wide embossed taping
* Gate pin face the perforation side of the tape
* Qty 1 kpcs/reel
* 1

NE5511279A Distributors

📁 Related Datasheet

NE5510179A NE5510279A NE5512 NE5512D NE5512N NE5514

📌 All Tags

NE5511279A 7.5V OPERATION SILICON POWER LD-MOS FET CEL

CEL NE5511279A-like datasheet

NE55410GR