NE3510M04 HETERO JUNCTION FIELD EFFECT TRANSISTOR

CEL

Description

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3510M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET .
of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and ap.

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Datasheet Specifications

Part number: NE3510M04
Manufacturer: CEL
File Size: 204.40 KB
Datasheet: NE3510M04_CEL.pdf
Description: HETERO JUNCTION FIELD EFFECT TRANSISTOR

Features

* Low noise figure and high associated gain NF = 0.45 dB TYP. , Ga = 16 dB TYP. @ f = 4 GHz, VDS = 2 V, ID = 15 mA NF = 0.35 dB TYP. , Ga = 19 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA (Reference only)

Applications

* Satellite radio (SDARS, DMB, etc. ) antenna LNA
* Low noise amplifier for microwave communication system ORDERING INFORMATION Part Number NE3510M0 4 NE3510M04-T2 Order Number N E 35 10 M0 4- A NE3510M04-T2-A Package Flat-lead 4-pin thintype super minimold (M04) (Pb-Free) Quantity 5

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NE3510M04 HETERO JUNCTION FIELD EFFECT TRANSISTOR CEL

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