MJE350 - PNP EPITAXIAL SILICON POWER TRANSISTOR

Product Overview

CDIL

Datasheet Details

Part number	MJE350
Manufacturer	CDIL
File Size	73.06 KB
Description	PNP EPITAXIAL SILICON POWER TRANSISTOR
Datasheet	MJE350 Datasheet
Additional preview pages of the MJE350 datasheet.

Product details

Description

Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate above 25ºC Power Dissipation @ Tc=25ºC Derate above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg VALUE 300 300 3.0 500 1.25 10 20 0.16 - 65 to +150 UNIT V V V mA W mW/ºC W W/ºC ºC THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case Rth (j-a) Rth (j-c) 100 6.25 ELECTRICAL CHARACTERISTICS

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Published: Nov 11, 2016 |