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MJE15033 - SILICON EPITAXIAL POWER TRANSISTORS

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Part number MJE15033
Manufacturer CDIL
File Size 82.42 KB
Description SILICON EPITAXIAL POWER TRANSISTORS
Datasheet download datasheet MJE15033 Datasheet
Note This datasheet PDF includes multiple part numbers: MJE15033, MJE15032.
Please refer to the document for exact specifications by model.
Additional preview pages of the MJE15033 datasheet.

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SYMBOL VALUE Collector- Base Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current Continuous Peak Base Current Power Dissipation TC=25ºC Derate Above 25ºC Power Dissipation TA=25ºC Derate Above 25ºC Operating & Storage Junction Temperature Range VCBO VCEO VEBO IC IB PD PD Tj, Tstg 250 250 5 8 16 2 50 0.4 2 0.016 - 65 to +150 Thermal Resistance Thermal Ambient Junction to Case Rth (j-a) Rth (j-c) 62.5 2.5 ELECTRICAL CHARACTERISTICS (Tc=25º C unless specified otherwi

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Other Datasheets by CDIL
  • MJE15032 - SILICON EPITAXIAL POWER TRANSISTORS
  • MJE15028 - NPN PLASTIC POWER TRANSISTORS
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  • MJE13002 - (MJE13002 / MJE13003) NPN EPITAXIAL SILICON POWER TRANSISTORS
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