Datasheet4U Logo Datasheet4U.com

CDD2395 - NPN Silicon Epitaxial Power Transistor

Description

SYMBOL VCBO Collector -Base Voltage VCEO Collector -Emitter Voltage VEBO Emitter- Base Voltage IC Collector Current ICP Peak (pulse) PC Power Dissipation @ Ta=25 deg C Power Dissipation @ Tc=25 deg C Tj Junction Temperature Tstg Storage Temperature Range DataSheet4U.com Single Pulse Pw=100

📥 Download Datasheet

Datasheet Details

Part number CDD2395
Manufacturer CDIL
File Size 250.99 KB
Description NPN Silicon Epitaxial Power Transistor
Datasheet download datasheet CDD2395 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CDD10810 Dual Diode POW-R-BLOK Modules 100 Amperes/800 Volts Powerex Power Semiconductors
CDD11210 Dual Diode POW-R-BLOK Modules 100 Amperes/1200-1600 Volts Powerex Power Semiconductors
CDD11610 Dual Diode POW-R-BLOK Modules 100 Amperes/1200-1600 Volts Powerex Power Semiconductors
CDD120 Diode DEE
CDD120N08 Diode DEE

Other Datasheets by CDIL

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 700000 IS / IECQC 750100 NPN SILICON EPITAXIAL POWER TRANSISTOR CDD2395 (9AW) TO-220 MARKING : AS BELOW Designed For Relay drive and DC-DC Converter. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VCBO Collector -Base Voltage VCEO Collector -Emitter Voltage VEBO Emitter- Base Voltage IC Collector Current ICP* Peak (pulse) PC Power Dissipation @ Ta=25 deg C Power Dissipation @ Tc=25 deg C Tj Junction Temperature Tstg Storage Temperature Range DataSheet4U.
Published: |