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2N699 - NPN SILICON EPITAXIAL TRANSISTOR

The 2N699 by CDIL is a NPN SILICON EPITAXIAL TRANSISTOR. Below is the official datasheet preview.

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Official preview page of the 2N699 NPN SILICON EPITAXIAL TRANSISTOR datasheet (CDIL).

Datasheet Details

Part number 2N699
Manufacturer CDIL
File Size 143.00 KB
Description NPN SILICON EPITAXIAL TRANSISTOR
Datasheet download datasheet 2N699-CDIL.pdf
Additional preview pages of the 2N699 datasheet.

2N699 Product details

Description

SYMBOL Collector Emitter Voltage VCER Collector Base Voltage VCBO Emitter Base Voltage VEBO Total Device Dissipation @ Ta=25ºC PD Derate Above 25ºC Total Device Dissipation@ Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Tj, Tstg Temperature Range THERMAL RESISTANCE Junction to Ambient Junction to Case Rth(j-a) Rth(j-c) ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Breakdown Voltage BVCER

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