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2N697 - NPN SILICON EPITAXIAL TRANSISTOR

The 2N697 by CDIL is a NPN SILICON EPITAXIAL TRANSISTOR. Below is the official datasheet preview.

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Official preview page of the 2N697 NPN SILICON EPITAXIAL TRANSISTOR datasheet (CDIL).

Datasheet Details

Part number 2N697
Manufacturer CDIL
File Size 138.55 KB
Description NPN SILICON EPITAXIAL TRANSISTOR
Datasheet download datasheet 2N697-CDIL.pdf
Additional preview pages of the 2N697 datasheet.

2N697 Product details

Description

SYMBOL Collector Emitter Voltage VCER Collector Base Voltage VCBO Emitter Base Voltage VEBO Power Dissipation @ Ta=25ºC PD Derate Above 25ºC Power Dissipation@ Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Tj, Tstg Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Base Breakdown Voltage BVCBO IC=100µA,IE=0 Collector Emitter Breakdown Voltage BVCER IC=100mA,RBE=10Ω Emiter Base Bre

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