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CSD60N100 - N-Channel Trench Power MOSFET

Description

The CSD60N100 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

Those devices are suitable for use in PWM, load switching and general purpose applications.

Features

  • VDS=60V; ID=45A RDS(ON).

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Datasheet preview – CSD60N100

Datasheet Details

Part number CSD60N100
Manufacturer CASS
File Size 663.73 KB
Description N-Channel Trench Power MOSFET
Datasheet download datasheet CSD60N100 Datasheet
Additional preview pages of the CSD60N100 datasheet.

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Full PDF Text Transcription

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N-Channel Trench Power MOSFET CSD60N100 General Description The CSD60N100 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). Those devices are suitable for use in PWM, load switching and general purpose applications. Features ● VDS=60V; ID=45A RDS(ON)<15mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Power switching application ● load switching To-252 Top View Schematic Diagram VDS =60V ID = 45A RDS(ON)= 11mΩ Package Marking and Ordering Information Device Marking Device Device Package CSD60N100 CSD60N100 TO-252 Reel Size - Table 1.
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