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MS10N65SJ - N-Channel MOSFET

Description

The MS10N65SJ is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, super junction device design, low on-resistance and cost effectiveness.

Features

  • Low RDS(on).
  • Ultra Low Gate Charge.
  • High dv/dt capability.
  • High Unclamped Inductive Switching (UIS) capability.
  • High peak current capability.
  • Increased transconductance performance.
  • Optimized design for high performance power systems Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Parameter Continuous drain current Pulsed drain current Avalanche energy, single pulse Avalanche current, repetitive MOSFET dv/dt ruggedness G.

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Datasheet Details

Part number MS10N65SJ
Manufacturer Bruckewell
File Size 738.66 KB
Description N-Channel MOSFET
Datasheet download datasheet MS10N65SJ Datasheet

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Full PDF Text Transcription

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MS10N65SJ 10A 650V N-Channel Super Junction MOSFET GENERAL DESCRIPTION The MS10N65SJ is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, super junction device design, low on-resistance and cost effectiveness.
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