MSF8N80-G Datasheet (Bruckewell Technology)

MSF8N80-G, 800V N-Channel MOSFET

This Power MOSFET is produced using the advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have high rugged avalanche characteristics.

These devices are well suited for high efficiency switch mode power supplies, active power

MSF8N80-G Features

* RDS(on) (typ 1.3 Ω )@VGS=10V

* Gate Charge (Typical 39nC)

* Improved dv/dt Capability, High Ruggedness

* 100% Avalanche Tested

* Maximum Junction Temperature Range (150°C)

* Halogen Free Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt