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MSF6N70 - 700V N-Channel MOSFET

Description

The MSF6N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • RoHS compliant / Halogen free package available Absolute Maximum Ratings Parameter Drain-Source Voltage (Tc=25°C unless otherwise noted) Symbol VDS ID ID IDM VGS EAS IAR EAR dV/dt PD Tj, Tstg Value 700 6.0 3.5 22 ±30 350 5.5 14.7 5.5 48 0.38 -55~+150 Unit V A A A V mJ A mJ V/ns W W °C Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C P.

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Datasheet preview – MSF6N70

Datasheet Details

Part number MSF6N70
Manufacturer Bruckewell Technology
File Size 1.00 MB
Description 700V N-Channel MOSFET
Datasheet download datasheet MSF6N70 Datasheet
Additional preview pages of the MSF6N70 datasheet.

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Full PDF Text Transcription

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MSF6N70 700V N-Channel MOSFET GENERAL DESCRIPTION The MSF6N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications FEATURES • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant / Halogen free package available Absolute Maximum Ratings Parameter Drain-Source Voltage (Tc=25°C unless otherwise noted) Symbol VDS ID ID IDM VGS EAS IAR EAR dV/dt PD Tj, Tstg Value 700 6.0 3.5 22 ±30 350 5.5 14.7 5.5 48 0.
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