BS616LV1010 Datasheet (Brilliance Semiconductor) - Very Low Power/Voltage CMOS SRAM

BS616LV1010, Very Low Power/Voltage CMOS SRAM

The BS616LV1010 is a high performance, very low power CMOS Static Random Access Memory organized as 65,536 words by 16 bits and operates from a wide range of 2.4V to 5.5V supply voltage.

Advanced CMOS technology and circuit techniques provide both hig

BS616LV1010 Features

* Very low operation voltage : 2.4 ~ 5.5V

* Very low power consumption : Vcc = 3.0V C-grade : 20mA (Max.) operating current I- grade : 25mA (Max.) operating current 0.02uA (Typ.) CMOS standby current Vcc = 5.0V C-grade : 35mA (Max.) operating current I- grade : 40mA (Max.) operating