BS616LV2012 - Very Low Power/Voltage CMOS SRAM

Name: BS616LV2012
SKU: BS616LV2012-123368

Brilliance Semiconductor

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Datasheet Details

Part number	BS616LV2012
Manufacturer	Brilliance Semiconductor
File Size	211.72 KB
Description	Very Low Power/Voltage CMOS SRAM
Datasheet	BS616LV2012_BrillianceSemiconductor.pdf

BS616LV2012 Product details

Description

The BS616LV2012 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits and operates from a wide range of 2.7V to 3.6V supply voltage.

Features

S.
Very low operation voltage : 2.7 ~ 3.6V.
Very low power consumption : Vcc = 3.0V C-grade: 30mA (Max. ) operating current I -grade: 35mA (Max. ) operating current 0.15uA (Typ. ) CMOS standby current.
High speed access time : -70 70ns (Max. ) at Vcc = 3.0V -10 100ns (Max. ) at Vcc = 3.0V.
Automatic power down when chip is deselected.
Three state outputs and TTL compatible.
Fully static operation.
Data retention supply voltage as low as 1.

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Published: Mar 23, 2005 |