Datasheet Details
- Part number
- BIDW50N65T
- Manufacturer
- Bourns
- File Size
- 1.13 MB
- Datasheet
- BIDW50N65T-Bourns.pdf
- Description
- Insulated Gate Bipolar Transistor
BIDW50N65T Description
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BIDW50N65T Features
* n 650 V, 50 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
n Trench-Gate Field-Stop technology
n Optimized for conduction
n RoHS compliant
BIDW50N65T Applications
* n Switch-Mode Power Supplies (SMPS) n Uninterruptible Power Sources (UPS) n Power Factor Correction (PFC) n Inverters
BIDW50N65T Insulated Gate Bipolar Transistor (IGBT)
General Information
The Bourns® Model BIDW50N65T IGBT device combines technology from a MOS gate and a bipolar transistor for an
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