Datasheet Details
- Part number
- BIDNW30N60H3
- Manufacturer
- Bourns
- File Size
- 1.25 MB
- Datasheet
- BIDNW30N60H3-Bourns.pdf
- Description
- Insulated Gate Bipolar Transistor
BIDNW30N60H3 Description
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BIDNW30N60H3 Features
* n 600 V, 30 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
n Trench-Gate Field-Stop technology
n Low switching loss
n Fast switching
n RoHS compliant
BIDNW30N60H3 Applications
* n Switch-Mode Power Supplies (SMPS) n Uninterruptible Power Sources (UPS) n Power Factor Correction (PFC) n Induction heating
BIDNW30N60H3 Insulated Gate Bipolar Transistor (IGBT)
General Information
The Bourns® Model BIDNW30N60H3 IGBT device combines technology from a MOS gate and a bipolar trans
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