BUL770 Datasheet (Bourns Electronic Solutions) - NPN SILICON POWER TRANSISTOR

BUL770, NPN SILICON POWER TRANSISTOR

www.DataSheet4U.com BUL770 NPN SILICON POWER TRANSISTOR Designed Specifically for High Frequency Electronic Ballasts up to 50 W hFE 7 to 21 at VCE = 1 V, IC = 800 mA Low Power Losses (On-state and Switching) Key Parameters Characterised at High Temperature Tight and Reproducible Parametric Distributions B C E 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base.

MDTRACA absolute maximum ratings at 25°C ambient temperature (unles