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BUL770 NPN SILICON POWER TRANSISTOR
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Designed Specifically for High Frequency Electronic Ballasts up to 50 W hFE 7 to 21 at VCE = 1 V, IC = 800 mA Low Power Losses (On-state and Switching) Key Parameters Characterised at High Temperature Tight and Reproducible Parametric Distributions
B C E
1 2 3 TO-220 PACKAGE (TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
BUL770 Datasheet
