Datasheet Details
- Part number
- BCG008
- Manufacturer
- BeRex
- File Size
- 543.01 KB
- Datasheet
- BCG008-BeRex.pdf
- Description
- 8W GaN Power Transistor
BCG008 Description
BCG008 8W GaN Power Transistor 8W GaN Power Transistor (0.15µm x 1250µm gate) The BeRex BCG008 is a GaN Power HEMT die with a nominal 0.15 micron gate.
BCG008 Features
* 39.0 dBm Typical Saturated Output Power (P3dB) @ 12 GHz
* 9.5 dB Typical Saturated gain (G3dB) @ 12 GHz
* 72 % PAE Typical @ 12 GHz
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